Thin Film Resistor Capacitor

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Resistor Technology, Capacitor Materials

Resistor Technology
Thin Film Resistors	SiCr	TaN	NiCr
Process	High Ohmic, High Voltage, Ultra-stable	High process temperature (no diffusion); Resistance to harsh environment	Low TCR
Typical Sheet Resistivity (ohm/sq)	300-1300	10-200	5-200
TCR (ppm/°C -25 to 125°C)	±50; 0 to -150	-100 to -150	0 to 100
Stability (Change after 1000 hours @ 125°C)	0.2%	0.2%	0.2%
Maximum Stabilization Temperature (°C)	500	450	350
Recommended Device Environment	Ambient Atmosphere	Ambient Atmosphere	Ambient with Passivation or Inert Atmosphere
Maximum Device Processing Temperature	Up to 1 hr. @ 400 °C	Up to 1/2 hr. @ 350 °C	Up to 1/2 hr. @ 260 °C
Tolerance (the greater of)	0.05% or 0.1 Ω	0.05% or 0.1 Ω	0.05% or 0.1 Ω

Capacitor Materials
Material	SiON	SiO₂	BCB	PI
pF/mm² Typical	55	35	25	30
Range	1-500 pF	1-500 pF	1-50 pF	0.5-10 pF
Trimmable	Yes	No	Yes	No
Tolerance; NOTE: value dependent	≥ 0.5%; or ≥ 0.05 pF	≥ 0.5%; or ≥ 0.05 pF	≥ 0.5%; or ≥ 0.05 pF	20%
Stability	±60 ppm/°C	±30 ppm/°C	±42 ppm/°C	±100 ppm/°C
Rated Voltage	≤ 100	≤ 100	≤ 25	≤ 25
BDV (v/µm)	600	1000	300	200
DF	≤ 0.1%	≤ 0.1%	≤ 0.1%	≤ 0.2%
Performance	K 5.8; TCC 60	K 4.0; TCC 30	K 2.7; TCC 42	K 3.3; TCC